Transistors Question & Answers September 2, 2021 By Wat Electrical Leave a Comment This article lists 100+ Transistors MCQs for engineering students. All the Transistors Questions & Answers given below includes solution and link wherever possible to the relevant topic. The transistors are small electronic devices that can be used as switches where we could use a small amount of current to drive a larger current. There are two main types of transistors they are bipolar and field-effect transistors. The NPN and PNP are bipolar transistors with two junctions, where JFET and MOSFET are field-effect transistors. 1). The ratio of collector current by the base current is known as _______________ gain Current Voltage Efficiency None of the above Hint 2). Which one of the following is a bipolar transistor? NPN PNP Both a and b None of the above Hint 3). How many junctions do NPN and PNP transistors have? One Two Three Four Hint 4). The emitter and collector of an NPN transistor are made up of _______________ semiconductor N-type P-type Both a and b None of the above Hint 5). The base of NPN transistors are made up of ______________ semiconductor N-type P-type Both a and b None of the above Hint 6). Which one of the following is heavily doped in BJT? Emitter Collector Base None of the above Hint 7). Which one of the following collects the electrons? Emitter Collector Base None of the above Hint 8). In how many regions does BJT can operate? One Two Three Four Hint 9). In an active region of operation the ______________ junction is forward biased Emitter base Collector base Base collector None of the above Hint 10). When the BJT is used for the amplification of the signal then it can be operated in _____________ region Active Cut off Saturation All of the above Hint 11). The base of PNP transistors made up of _______________ semiconductor N-type P-type Both a and b None of the above Hint 12). The emitter and collector of a PNP transistor are made up of _______________ semiconductor N-type P-type Both a and b None of the above Hint 13). In a BJT common emitter configuration ____________ terminal is common between input and output Emitter Collector Base None of the above Hint 14). In bipolar junction transistor the cut off frequency is ____________ 10GHz 50GHz 100GHz 1000GHz Hint 15). The switch implementation is poor in ________________ transistor BJT MOSFET Both a and b None of the above Hint 16). What is the standard form of BJT? Base Junction Transistor Biased Junction Transistor Bipolar Junction Transistor None of the above Hint 17).The bipolar junction transistor is categorized into ____________ types One Two Three Four Hint 18). The input resistance of common base is ____________ Low Very low High Very high Hint 19). The cut off frequency of MOSFET is ______________ 10GHz 50GHz 100GHz 1000GHz Hint 20). Which one of the following is lightly doped in BJT? Emitter Collector Base None of the above Hint 21). What is the standard form of UJT? Uni Junction Transistor Union Junction Transistor Unipolar Junction Transistor None of the above Hint 22). In an active region of operation the ______________ junction is reverse biased Emitter base Collector base Base collector None of the above Hint 23). In a BJT common collector configuration ____________ terminal is common between input and output Emitter Collector Base None of the above Hint 24). The output resistance of the common base is ______________ Low Very low High Very high Hint 25). Which one of the following is a unipolar device? JFET BJT Both a and b None of the above Hint Transistors MCQ's With Hints 26). Which one of the following is a voltage-driven device? JFET BJT Both a and b None of the above Hint 27). In ___________ transistor the gain is characterized by trans-conductance JFET BJT Both a and b None of the above Hint 28).The turn off time in IGBT is_____________ 2µs 15µs 10µs 100µs Hint 29). The switching frequency of power MOSFET is _____________ 10KHz 100KHz 15KHz 1KHz Hint 30). The conduction drop in power MOSFET is ____________ 10volts 100volts 4-6volts 1volt Hint 31). The voltage and current rating of power MOSFET is _____________ 100V/200A 200V/100A 100V/20A 500V/200A Hint 32). The blocking capacity is asymmetrical in _____________ MOSFET IGBT Both a and b None of the above Hint 33). In which one of the following transistors does the secondary break down occur? MOSFET IGBT BJT None of the above Hint 34). The saturation voltage is low in ____________ IGBT BJT Both a and b None of the above Hint 35). The switching speed is fast in ______________ transistor MOSFET IGBT BJT None of the above Hint 36). The operating frequency is medium in _____________ transistor MOSFET IGBT BJT None of the above Hint 37). What is the standard form of MOSFET? Metal Oxide Field Effect Transistor Metal Oxide Silicon Field Effect Transistor Metal Oxide Semiconductor Field Effect Transistor None of the above Hint 38). How many junctions does UJT have? One Two Three Four Hint 39). What is the important parameter in BJT? Current gain Intrinsic ratio Both a and b None of the above Hint 40). Which one of the following is moderately doped in BJT? Emitter Collector Base None of the above Hint 41). In a BJT common base configuration ____________ terminal is common between input and output Emitter Collector Base None of the above Hint 42). The output resistance of common emitter is ______________ Low Very low High Very high Hint 43). The input resistance of common emitter is ____________ Low Very low High Very high Hint 44). The turn-on time in BJT is_____________ 1µs 15µs 10µs 100µs Hint 45). The unipolar junction transistor operated by ____________ carriers Majority Minority Both a and b None of the above Hint 46). ________________ are the terminals of MOSFET Gate Drain Source All of the above Hint 47). What is the standard form of IGBT? Insulated Gate Biased Transistor Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transformer None of the above Hint 48). The junction field-effect transistors are ____________ Less sophisticated Manufacturing process is simple More sophisticated Both a and b Hint 49). Which one of the following transistors is mainly used in low noise applications? MOSFET JFET Both a and b None of the above Hint 50). The control method in FET is ___________ Input voltage Input current Both a and b None of the above Hint Transistors Important MCQs for Interviews 51). In the saturation region _____________ is forward biased Base emitter Base collector Both a and b None of the above Hint 52). In cut off region _____________ is reverse biased Base emitter Base collector Both a and b None of the above Hint 53). In an active region _____________ is forward biased Base emitter Base collector Both a and b None of the above Hint 54). The bipolar junction transistor is a __________ device Three-terminal Three-layer Both a and b None of the above Hint 55). What is the standard form of IGFET? Insulated Gate Field Effect Transistor Insulated Field Effect Transistor Insulated Gate Field Effect Transformer None of the above Hint 56). The field-effect transistor used as ___________ Amplifier Analog switch Integrated circuits All of the above Hint 57). The operation of the FET relies on ____________ Free electrons Holes Either free electrons or holes None of the above Hint 58). The current in the field-effect transistor is controlled by applying voltage between _______________ terminal Gate and source Drain and source Drain and gate None of the above Hint 59). The input resistance of common collector is ____________ Low Very low High Very high Hint 60). The output resistance of the common collector is ______________ Low Very low High Very high Hint 61). The conduction drop in BJT is ____________ <2volts 100 volts 4-6 volts 1volt Hint 62). The parallel operations are possible in _____________ MOSFET IGBT Both a and b None of the above Hint 63). In the field-effect transistor the current is used to flow between _______________ terminals Gate and source Drain and source Drain and gate None of the above Hint 64). How many terminals does FET have? One Two Three Four Hint 65). The gain-bandwidth product is low in _______________ JFET b)c)d MOSFET Both a and b None of the above Hint 66). The voltage and current rating of BJT is _____________ 100V/200A 2KV/100A 2KV/1KA 500V/200A Hint 67). The input-output relation is non-linear in _______________ JFET MOSFET Both a and b None of the above Hint 68). The turn-on time in IGBT is_____________ <1µs 15µs 10µs 100µs Hint 69). The voltage gain of the common collector is ____________ Low Better High Very low Hint 70). What are the advantages of transistors? Low operating voltage No power consumption Fast switching All of the above Hint 71). The current carriers in a PNP transistor is ____________ Holes Electrons Both a and b None of the above Hint 72). What is the standard form of FET? Field Effect Transistor Field Emitter Transistor Field Emitter Transformer None of the above Hint 73). In which one of the following the thermal stability is less? JFET BJT Both a and b None of the above Hint 74). Which one of the following is a current-controlled device? JFET BJT MOSFET None of the above Hint 75). The input impedance high in ____________ JFET BJT Both a and b None of the above Hint Transistors MCQs for Quiz 76). The input resistance is high in ____________ transistor MOSFET IGBT BJT Both a and b Hint 77). The unipolar junction transistor is a ________________ layer device One Two Three Four Hint 78). What is the important parameter in UJT? Current gain Intrinsic ratio Both a and b None of the above Hint 79). The unipolar junction transistor is a _______________ device Current control Voltage control Both a and b None of the above Hint 80). The voltage gain of the common emitter is ____________ Low Better High Very low Hint 81). How many junctions do transistors have? One Two Three Four Hint 82). In MOSFET the channel exists permanently in ____________ mode Depletion Enhancement Both a and b None of the above Hint 83). In which one of the following transistors the gate is formed as a diode? JFET MOSFET Both a and b None of the above Hint 84). The drain resistance is high in ___________ JFET MOSFET Both a and b None of the above Hint 85). Which one of the following is difficult to fabricate? JFET MOSFET Both a and b None of the above Hint 86). The MOSFET operates in ______________ mode Depletion Enhancement Both a and b None of the above Hint Read more about MOSFET 87). The JFET operates in ______________ mode Depletion Enhancement Both a and b None of the above Hint 88). The trans-conductance is very high in __________ channel P-type N-type Both a and b None of the above Hint 89). The current carriers are ___________ in P-channel JFET Holes Electrons Both a and b None of the above Hint 90). The current carriers are ___________ in N-channel JFET Holes Electrons Both a and b None of the above Hint 91). The field-effect transistors are categorized into _____________ types One Two Three Four Hint 92). In which one of the following transistors the terminals are not interchangeable? BJT FET MOSFET None of the above Hint 93). The control method in BJT is ___________ Input voltage Input current Both a and b None of the above Hint 94). The voltage gain of the common base is ____________ Low Better High Very high Hint 95). In which one of the following transistors the gate is formed as a capacitor? JFET MOSFET Both a and b None of the above Hint Read more about Capacitors 96). The leakage current in the common base is ____________ Large Very large Less Very small Hint 97). The leakage current in the common-emitter is ____________ Large Very large Less Very less Hint 98). The turn off time in bipolar junction transistor is_____________ 2µs 15µs 2-5µs 100µs Hint 99). In _____________ transistor the gain is characterized by voltage gain BJT FET Both a and b None of the above Hint 100). The current flow is unipolar in _____________ transistor FET MOSFET Both a and b None of the above Hint JFET MOSFET Both a and b None of the above Hint Time is Up! Time's up
Leave a Reply